New article has been selected as cover of the Applied Physics Letter March 28 Issue
A new article from Project H and Project I about the “Determination of site occupancy of boron in 6H–SiC by multiple-wavelength neutron holography” has been featured on the cover of Applied Physics Letters.
Using neutron holography, they have succeeded in observing the peculiar structure formed around B doped in SiC. This discovery will greatly facilitate the development of power semiconductors. This research was accomplished by the fusion of advanced measurement technology in NITech and synthesis technology in FAU.
K. Hayashi, M. Lederer, Y. Fukumoto, M. Goto, Y. Yamamoto, N. Happo, M. Harada, Y. Inamura, K. Oikawa, K. Ohoyama. P. Wellmann:
Determination of site occupancy of boron in 6H–SiC by multiple-wavelength neutron holography, Appl. Phys. Lett. 120, 132101 (2022)