Project I – Growth of Single Crystal Transition Metal Perovskite Chalcogenides
In recent years semiconducting organic-inorganic lead halide perovskite materials have gained much interest due to their outstanding optoelectronic properties for use in solar cells and lighting applications. A major drawback of these materials is related to their toxicity and chemical instability. Recently, purely inorganic transition metal perovskite chalcogenides (TMPC) have been synthesized that exhibit promising (opto-)electronic properties and may even allow opto- electrochemical applications. Compared to their perovskite oxide counterparts of type ABO3 (A = alkali, alkaline, or rare earth metal, B = transition metal) with a large electronic bandgap (EG > 3eV), many perovskite chalcogenides exhibit an electronic bandgap in visible light spectrum that is related to the replacement of O by S or Se in the crystal lattice and which may enable a broad spectrum of applications. In this work, the piezoelectric properties of the new compound semiconductor material stand in the foreground.
Entering now into the third phase, this project aims to grow crystalline (single ~ and poly ~) BaZrS3 layers as already developed in the first and second project phase and apply them in electronic test devices for regenerative energy harvesting. For this purpose, the piezo and potentially ferroelectric material properties will be studied using fundamental materials characterization tools as well as application related test environments. The final goal is to build a simple demonstrator which converts mechanical into electrical energy.
Principal Investigators
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Prof. Dr. Peter Wellmann Institute of Materials for Electronics and Energy Technology Department of Materials Science and Engineering Friedrich-Alexander-Universität Erlangen-Nürnberg peter.wellmann@fau.de |
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Asst. Prof. Dr. Reina Miyagawa |
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Prof. Dr. Koichi Hayashi Physical Science and Engineering Department Frontier Research Institute for Materials Science Nagoya Institute of Technology, Japan hayashi.koichi@nitech.ac.jp |
Doctoral Researchers
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Sumbal Jamshaid, M.Sc. Institute of Materials for Electronics and Energy Technology Department of Materials Science and Engineering Friedrich-Alexander-Universität Erlangen-Nürnberg sumbal.jamshaid@fau.de |
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Kongshik Rho, M.Sc. Electrical and Mechanical Engineering Department Frontier Research Institute for Materials Science Nagoya Institute of Technology, Japan k.rho.991@stn.nitech.ac.jp |
Associated Researchers
Prof. Dr. Koji Kimura (NITech)
Publications Project I
2024
- , , , :
Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches
In: Crystals 14 (2024), Art.Nr.: 267
ISSN: 2073-4352
DOI: 10.3390/cryst14030267 - , , , , :
Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates
In: Advanced Engineering Materials (2024)
ISSN: 1438-1656
DOI: 10.1002/adem.202302161 - , , :
Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance
In: ECS Journal of Solid State Science and Technology 13 (2024), Art.Nr.: 125002
ISSN: 2162-8769
DOI: 10.1149/2162-8777/ad9e7a
2022
- , , :
Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites
In: physica status solidi (b) (2022)
ISSN: 0370-1972
DOI: 10.1002/pssb.202200094 - , , , , , , , , , , :
Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography
In: Applied Physics Letters 120 (2022), Art.Nr.: 132101
ISSN: 0003-6951
DOI: 10.1063/5.0080895
2020
- , , , , , , , , , , , , , , , , , , , , , , , , , , , :
Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates
In: Advanced Functional Materials 30 (2020), Art.Nr.: ARTN 2004612
ISSN: 1616-301X
DOI: 10.1002/adfm.202004612





